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电子与光电材料研究润色样本

电子与光电材料研究结合了固态物理和化学、电子和化学工程、以及材料科学的基本原理。Enago在电子与光电材料研究方面有深厚的专业知识储备，拥有材料科学、半导体等相关学科的专业编辑和校对人员，且已润色了大量此领域相关的科研论文，并协助诸多学术作者成功在国际知名SCI期刊上发表高水平论文。

润色后的文稿

Figure 4, shows a CTSe thin film the X-ray powder diffraction (XRD) pattern of a thin CTSe film obtained prepared by through sequential deposition of thin films of CuSe and SnSe thin films, with using a preparation routine like one plottedshown in Fig. 3 and with evaporated masses of Cu and Sn of 0.01 and 0.07 g, respectively. The Figure 4 also showed shows  1 the XRD patterns for films of CuSe and SnSe films . Thesey are XRD patterns were compared with the CTSe diffractogrammy in order to get identify the reflections corresponding to secondary phases in the thin CTSe films with a greater degree of accuracy the reflections corresponding to secondary phases in the thin CTSe films.

Cu2SnSe3 thin films were grown with using a method based on sequential evaporation of thin films of CuSe, and SnSe thin films in a two two-stage process. Characterization done performed by XRD gave evidence of theproved the formation of a compound formation containing predominantly the Cu2SnSe3 phase;, however, the sequence with in which the binary precursors are evaporated and the preparation parameters, more significantly affects the phase formation as well as the structural, optical, and electricaltransportation properties 2 of the thin CTSe films. Moreover oOptical characterization performed byusing spectral transmittance measurements revealed that the CTSe films have low transmittance and also poor crystallographic quality, probably associated to structural and native defects, indicating that further studies must be done performed to improve CTSe films properteisproperties. Furthermore,  3 The the results revealed demonstrated that characterize of the Cu2SnSe3 films is could be potentially used for a done to get p–-type conductivity semiconductor and with an energy band gap (Eg) of approximatelysomewhat 1.6 eV also.

Temperature-dependent Conductivity conductivity measurements on temperature dependence revealed that the  4 conductivitiesy of the CTSe films were is predominantly affected with by the transport of free carriers transport in states of the valence band. In high temperatures ranges (T > 550 K), the increase of σ could be attributed to an the increase of in the carrier densityies coming originating from deep acceptor impurities, whereas the change of σ observed in the low temperatures range (T < 350 K) can be attributed to a changes of in the carrier density of carrier coming originating from shallow acceptor impurities associated to with secondary phases.

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润色后的文稿

Figure 4, shows a CTSe thin film the XRD pattern of a thin CTSe film obtained by through sequential deposition of thin films of CuSe and SnSe, with using a preparation routine like as one that plotted in Fig. 3 and with evaporated masses of Cu and Sn of 0.01 and 0.07 g, respectively. The Figure 4 also showed shows  1the XRD patterns for films of CuSe and SnSe films . Thesey are were compared with the CTSe diffractogrammy in order to get obtain with a greater degree of accuracy the reflections corresponding to secondary phases in the thin CTSe films with a greater degree of accuracy.

Cu2SnSe3 thin films were grown with using a method based on sequential evaporation of thin films of CuSe, and SnSe in a two two-stage process. Characterization done performed by XRD gave evidence of theproved the formation of a compound formation containing predominantly the Cu2SnSe3 phase;, however, the sequence with in which the binary precursors are evaporated and the preparation parameters, more significantly affects the phase as well as the structural, optical, and electricaltransportation properties 2 of the thin CTSe films. Moreover oOptical characterization performed by spectral transmittance measurements revealed that the CTSe films have low transmittance and also poor crystallographic quality, probably associated to structural and native defects, indicating that further studies must be done to improve CTSe films properteisproperties. Furthermore,  3The the results revealed that characterize of the Cu2SnSe3 films is could be characterized done to get obtain p-–type conductivity and with an energy band gap (Eg) of aroundsomewhat 1.6 eV also.

Temperature-dependent Conductivity conductivity measurements on temperature dependence revealed that the conductivitiesy of the CTSe films were is predominantly affected with by the free carrier transport in states of the valence band. In high temperatures ranges (T > 550 K), the increase of σ could be attributed to an the increase of in the carrier densityies coming originating from deep acceptor impurities, whereas the change of σ observed in the low temperatures range (T < 350 K) can be attributed to a changes of in the carrier density of carrier coming originating from shallow acceptor impurities associated to with secondary phases.

Editor's Comments

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Source: original text used from doaj.org with modifications under CC-BY 4.0

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